Infrared focal plane array technology is a detector manufacturing technology that integrates a two-dimensional detector array on a focal plane with a multiplexed readout circuit. This research mainly discusses the high thermal sensitivity performance of the ferroelectric vanadium oxide hybrid process in thermal imaging monitoring. The choice of vanadium oxide as the material for the microbolometer is due to its high electrical resistivity, high electrical resistivity, easy manufacturing, etc., especially compatibility with silicon technology, easy mass production and low cost. In this study, a direct current magnetron sputtering technique was used to prepare undoped and Fe-doped vanadium oxide films on a glass substrate. By controlling the process parameters of magnetron sputtering, the purpose of controlling the square resistance value and resistance temperature sensitivity of the film is achieved. The vanadium target is a disc of metallic vanadium with a purity of 99.99%, a diameter of 80 mm, and a thickness of 4 mm. The specification of the patch used for doping is an Fe sheet with 99.99% purity and a size of 2mmx2.5mmx1mm. Place Fe flakes on the vanadium target, and control the concentration of doped Fe by the number of Fe flakes placed. In order to obtain high performance, the thermal array should be packaged in a vacuum envelope with an infrared emission window. Sensitive elements should not be connected to the sensitive elements of neighboring pixels to avoid thermal diffusion and loss of image resolution. When the rapid heat treatment temperature is increased to 500℃, the binding energy of the characteristic peak of V(2p3/2) drops to 516.03eV, which is in the range of VO2 binding energy (515.7-516.2eV). This research will promote the application of VO2 in thermal imaging monitoring.

Fang Bi. High Thermal Sensitivity Performance of Ferroelectric Vanadium Oxide Hybrid Process in Thermal Imaging Monitoring. International Journal of Big Data Intelligent Technology (2020), Vol. 1, Issue 1: 90-106. https://doi.org/10.38007/IJBDIT.2020.010106.

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